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RJP65S03DWAのメーカーはRenesasです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | RJP65S03DWA |
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部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとRJP65S03DWAダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Preliminary Datasheet
RJP65S03DWT/RJP65S03DWA
650V - 30A - IGBT
Application: Inverter
R07DS0820EJ0001
Rev.0.01
Jul 05, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)
High speed Switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP65S03DWT-80
Wafer: RJP65S03DWA-80
3
1
3
2
www.DataSheet.net/
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC Note1
IC Note1
Tj
Notes: 1. This data is a regulated value in evaluation package.
Ratings
650
±30
60
30
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0820EJ0001 Rev.0.01
Jul 05, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 Page RJP65S03DWT/RJP65S03DWA
Die Dimension
1.31
2.19
Preliminary
Emitter bonding pad (1)
Gate
bonding pad
Emitter bonding pad (2)
3.55
4.9
www.DataSheet.net/
Unit: mm
Note 1.
Illustration
Part of white
Part of dotted line
Part of hatching
Definition
Al pattern
Bonding area
Final passivation
Note 2. The back of the chip is processed with Au evaporation.
Note 3. Recognition, target and any other patterns which are not related to
Diode operation, may be changed without notice.
Ordering Information
Orderable Part Number
RJP65S03DWA-80#W0
RJP65S03DWT-80#X0
R07DS0820EJ0001 Rev.0.01
Jul 05, 2012
Page 3 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ RJP65S03DWA データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
RJP65S03DWA | IGBT ( Insulated Gate Bipolar Transistor ) | Renesas |
RJP65S03DWT | IGBT ( Insulated Gate Bipolar Transistor ) | Renesas |