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RJH1CV7DPK の電気的特性と機能

RJH1CV7DPKのメーカーはRenesasです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 RJH1CV7DPK
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Renesas
ロゴ Renesas ロゴ 




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RJH1CV7DPK Datasheet, RJH1CV7DPK PDF,ピン配置, 機能
Preliminary Datasheet
RJH1CV7DPK
1200V - 35A - IGBT
Application: Inverter
R07DS0748EJ0200
Rev.2.00
Jun 12, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 200 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 280 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
1200
30
70
35
105
35
105
320
0.39
0.69
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0748EJ0200 Rev.2.00
Jun 12, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 Page





RJH1CV7DPK pdf, ピン配列
RJH1CV7DPK
Main Characteristics
Collector Dissipation vs.
Case Temperature
400
300
200
100
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Preliminary
Maximum DC Collector Current vs.
Case Temperature
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100 PW
10 100 μs = 10 μs
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100
1000 10000
Collector to Emitter Voltage VCE (V)
Turn-off SOA
120
100
80
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60
40
20
0
0 400 800 1200 1600
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
100
Tc = 25°C
Pulse Test
80
15 V
12 V
60
10 V
40
20
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
100
Tc = 150°C
Pulse Test
80
15 V
12 V
60
10 V
40
20 VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
R07DS0748EJ0200 Rev.2.00
Jun 12, 2012
Page 3 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/


3Pages


RJH1CV7DPK 電子部品, 半導体
RJH1CV7DPK
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
VGE = 0 V
f = 1 MHz
Tc = 25°C
1
0 40
80
Cres
120 160 200
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
600
VCC = 400 V
500 IF = 35 A
400
300 Tc = 150°C
200 25°C
100
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
30
VCC = 400 V
25 IF = 35 A
20
Tc = 150°C
15
10
25°C
5
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
IC = 35 A
VCC = 300 V
Tc = 25°C
600
VGE
16
12
400 8
200 4
VCE
0
0 40
0
80 120 160 200
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
3.0
VCC = 400 V
2.5 IF = 35 A
2.0 Tc = 150°C
1.5
1.0
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0.5
25°C
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
100 VCE = 0 V
Pulse Test
80
Tc = 25°C
60
40
150°C
20
0
01234
C-E Diode Forward Voltage VCEF (V)
R07DS0748EJ0200 Rev.2.00
Jun 12, 2012
Page 6 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/

6 Page



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共有リンク

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部品番号部品説明メーカ
RJH1CV7DPK

IGBT ( Insulated Gate Bipolar Transistor )

Renesas
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