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Datasheet RJH1CF6RDPQ-80 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RJH1CF6RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1CF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 | Renesas | data |
RJH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJH1BF6RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V Renesas data | | |
2 | RJH1BF7RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V Renesas data | | |
3 | RJH1CD5DPQ-A0 | High Speed Power Switching Preliminary Datasheet
RJH1CD5DPQ-A0
1200 V - 15 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas data | | |
4 | RJH1CD5DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD5DPQ-E0
1200V - 20A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
5 | RJH1CD6DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-A0
1200 V - 20 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | | |
6 | RJH1CD6DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD6DPQ-E0
1200V - 25A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in o Renesas igbt | | |
7 | RJH1CD7DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH1CD7DPQ-A0
1200 V - 25 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (trr = 100 ns typ.) in Renesas igbt | |
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Número de pieza | Descripción | Fabricantes | |
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