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RJH60F3DPQ-A0 の電気的特性と機能

RJH60F3DPQ-A0のメーカーはRenesasです、この部品の機能は「High Speed Power Switching」です。


製品の詳細 ( Datasheet PDF )

部品番号 RJH60F3DPQ-A0
部品説明 High Speed Power Switching
メーカ Renesas
ロゴ Renesas ロゴ 




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RJH60F3DPQ-A0 Datasheet, RJH60F3DPQ-A0 PDF,ピン配置, 機能
Preliminary Datasheet
RJH60F3DPQ-A0
600 V - 20 A - IGBT
High Speed Power Switching
R07DS0391EJ0200
Rev.2.00
Jul 22, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
40
20
80
80
178.5
0.7
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 Page





RJH60F3DPQ-A0 pdf, ピン配列
RJH60F3DPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
100 100 μs PW = 10 μs
10
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
80
PVuClEse=T1e0stV
TPau=lse25T°eCst
60
40 Tc = 75°C
25°C
20 –25°C
0
2 4 6 8 10 12
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
VGE = 15 V
Pulse Test
2.0
IC = 40 A
1.8
1.6 20 A
15 A
1.4
1.2
25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
www.DataSheet.net/
Preliminary
Typical Output Characteristics
80
Ta = 25°C
Pulse Test
60 12 V
15 V
40
10.5 V
11 V
10 V
9.5 V
9V
20
VGE = 8.5 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.4
Ta = 25°C
3.0 Pulse Test
2.6
2.2 IC = 40 A
20 A
1.8 15 A
1.4
1.0
8
10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8 IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/


3Pages


RJH60F3DPQ-A0 電子部品, 半導体
RJH60F3DPQ-A0
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 D=1
0.5
0.2
0.1
0.05
0.1 0.01 0.02
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 0.7°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
www.DataSheet.net/
PDM
PW
T
D=
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp
Rg
L
D.U.T
VCC
VGE
10%
90%
IC
VCE
10%
td(on) tr
ton
90%
10%
1%
td(off) tf ttail
toff
10%
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 6 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

6 Page



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部品番号部品説明メーカ
RJH60F3DPQ-A0

High Speed Power Switching

Renesas
Renesas


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