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RD70HVF1 の電気的特性と機能

RD70HVF1のメーカーはMitsubishiです、この部品の機能は「Silicon MOSFET Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 RD70HVF1
部品説明 Silicon MOSFET Power Transistor
メーカ Mitsubishi
ロゴ Mitsubishi ロゴ 




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RD70HVF1 Datasheet, RD70HVF1 PDF,ピン配置, 機能
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers
applications.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
1
3
5.0+/-0.3
18.5+/-0.3
4-C2
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
RoHS COMPLIANT
RD70HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS
VGSS
Drain to source voltage
Gate to source voltage
Vgs=0V
Vds=0V
www.DataSheet.net/
30
+/-20
V
V
Pch Channel dissipation
Tc=25°C
150 W
Pin Input power
Zg=Zl=50
10(Note2) W
ID Drain current
- 20 A
Tch Channel temperature
-
175 °C
Tstg Storage temperature
- -40 to +175 °C
Rth j-c Thermal resistance
junction to case
1.0 °C/W
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 20W
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
- - 300 uA
IGSS Gate to source leak current VGS=10V, VDS=0V
- - 5 uA
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.3 1.8 2.3
V
Pout Output power
f=175MHz ,VDD=12.5V
70 75
-
W
ηD Drain efficiency
Pin=6W, Idq=2.0A
55 60
-
%
Pout Output power
f=520MHz ,VDD=12.5V
50 55
-
W
ηD Drain efficiency
Pin=10W, Idq=2.0A
50 55
-
%
Load VSWR tolerance
VDD=15.2V,Po=70W(PinControl)
f=175MHz,Idq=2.0A,Zg=50
LoadVSWR=20:1(All phase)
No destroy
-
Load VSWR tolerance
VDD=15.2V,Po=50W(PinControl)
f=520MHz,Idq=2.0A,Zg=50
Load VSWR=20:1(All phase)
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 Page





RD70HVF1 pdf, ピン配列
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
50
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=2A
40
Po
30
Gp
20
100
80
η
60
40
10 20
00
10 20 30 40
Pin(dBm)
Pin-Po CHARACTERISTICS @f=175MHz
100
Po
100
80 80
ηd
60 60
40
Ta=25°C
40
f=175MHz
Vdd=12.5V
20
Idd
Idq=2A
20
00
0 2 4 6 8 10
Pin(W)
Pin-Po CHARACTERISTICS @f=520MHz
50
Ta=+25°C
f=520MHz
40
Vdd=12.5V
Idq=2A
Po
100
80
η
30 60
20
Gp
10
40
20
00
10 20 30 40
Pin(dBm)
Pin-Po CHARACTERISTICS @f=520MHz
70 70
Po
60 60
50
www.DataSheet.net/
40
ηd 50
40
30
Ta=25°C
30
f=520MHz
20
Vdd=12.5V
20
Idq=2A
Idd
10 10
00
0 5 10 15 20
Pin(W)
Vdd-Po CHARACTERISTICS @f=175MHz
100
80
60
Ta=25°C
f=175MHz
Pin=6W
Idq=2A
Zg=ZI=50 ohm
40
20
0
46
8 10
Vdd(V)
20
18
Po
16
14
12
Idd 10
8
6
4
2
0
12 14
Vdd-Po CHARACTERISTICS @f=520MHz
70 12
Ta=25°C
60 f=520MHz
Pin=10W
Idq=2A
50 Zg=ZI=50 ohm
40
Po 10
8
Idd
6
30 4
20 2
10 0
4 6 8 10 12 14
Vdd(V)
RD70HVF1
MITSUBISHI ELECTRIC
3/8
10 Jan 2006
Datasheet pdf - http://www.DataSheet4U.co.kr/


3Pages


RD70HVF1 電子部品, 半導体
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=135MHz Zout
Zo=10
f=175MHz Zout
f=175MHz Zin
Zin, Zout
f
(MHz)
135
175
Zin
(ohm)
0.43-j3.19
0.55-j2.53
f=135MHz Zin
Zout
(ohm)
0.70+j0.25
0.72-j0.36www.DataSheet.net/
Conditions
Po=90W, Vdd=12.5V,Pin=6W
Po=80W, Vdd=12.5V,Pin=6W
f=520MHz Zout
f=520MHz Zin
Zo=10
f=440MHz Zout
f=440MHz Zin
Zin, Zout
f
(MHz)
440
520
Zin
(ohm)
0.74-j0.34
1.04+j0.63
Zout
(ohm)
0.71-j0.18
0.93+j1.62
Conditions
Po=60W, Vdd=12.5V,Pin=10W
Po=55W, Vdd=12.5V,Pin=10W
RD70HVF1
MITSUBISHI ELECTRIC
6/8
10 Jan 2006
Datasheet pdf - http://www.DataSheet4U.co.kr/

6 Page



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部品番号部品説明メーカ
RD70HVF1

Silicon MOSFET Power Transistor

Mitsubishi
Mitsubishi


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