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PDF TGS4306-FC Data sheet ( Hoja de datos )
| Número de pieza | TGS4306-FC | |
| Descripción | 70-90 GHz SP4T Switch Flip Chip | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGS4306-FC
70-90 GHz SP4T Switch Flip Chip
Measured Performance
Bias conditions, OFF: Vd = 1.35 V, Id = 10 mA, State 5
Typical
ON: Vd = -5V, Id = 0 mA, State 2
RF IN to RF OUT 2
0
-10 ON
OFF
-20
-30
-40
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
0
State 2
-5
-10
-15
S11
-20
S22
-25
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
Key Features
• Frequency Range: 70-90 GHz
• 3.0 dB Typical Flipped Insertion Loss
• 20 dB Nominal Isolation
• 8 dB Typical Thru State Return Loss
• < 5 nsec Switching Speed
• Integrated DC blocking at RF ports
• Chip dimensions: 1.69 x 1.37 x 0.38 mm
(0.067 x 0.054 x 0.015 in)
Primary Applications
• Automotive Transceivers
• E-Band Transceivers
Product Descriptionwww.DataSheet.net/
The TriQuint TGS4306-FC is a 70-90 GHz
SP4T Switch. This part is designed using
TriQuint’s proven standard VPIN production
process. The switching speed for TGS4306-
FC is < 5 nsec typically.
The TGS4306-FC, when flipped, provides
a nominal 3.0 dB insertion loss, 8 dB return
loss in the thru state, and 20 dB isolation in
the automotive band.
The TGS4306-FC integrates DC blocking
capacitors on all output ports to reduce the
number of off-chip components.
The TGS4306-FC has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev B
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Measured Data
TGS4306-FC
Return Loss
RF IN to RF OUT 2
0
State 2
-5
-10
-15
S11
-20
S22
-25
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
www.DataSheet.net/
RF IN to RF OUT2
0
-5
State 5
-10
-15
S11
-20 S22
-25
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev B
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
TGS4306-FC
Assembly Notes
Component placement and die attach assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap.
• Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for
the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au /
Sn mass ratio must not exceed 8%.
• Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical
solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from
undercutting the barrier.
Reflow process assembly notes:
• Minimum alloying temperatures 245 ˚C.
• Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle.
• An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used.
• Dip copper pillars in “no-clean flip chip” flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire
die to flux.
• If screen printing flux, use small apertures and minimize volume of flux applied.
• Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
• Suggested reflow will depend on board material and density.
www.DataSheet.net/
See Triquint Application Note for flip-chip soldering process: TBD
Typical Reflow Profiles for TriQuint Cu / Sn Pillars
Process
Ramp-up Rate
Flux Activation Time and Temperature
Time above Melting Point (245 ˚C)
Max Peak Temperature
Time within 5 ˚C of Peak Temperature
Ramp-down Rate
Sn Reflow
3 ˚C/sec
60 – 120 sec @ 140 – 160 ˚C
60 – 150 sec
300 ˚C
10 – 20 sec
4 – 6 ˚C/sec
Ordering Information
Part
TGA4306-FC
Package Style
GaAs MMIC Die
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
11
November 2009 © Rev B
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGS4306-FC.PDF ] | |
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