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PDF FH101 Data sheet ( Hoja de datos )

Número de pieza FH101
Descripción GaAs MESFET
Fabricantes TriQuint Semiconductor　
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FH101
High Dynamic Range FET
Product Features
Product Description
Functional Diagram
• 50 – 4000 MHz
• 18 dB Gain
• +18 dBm P1dB
• +36 dBm OIP3
• Low Noise Figure
• Single or Dual Supply Operation
• MTTF > 100 years
• Lead free/green/RoHS-compliant
SOT-89 Package
Applications
• Mobile Infrastructure
• CATV / DBS
• WLAN / ISM
• Defense / Homeland Security
The FH101 is a high dynamic range FET packaged in a
low-cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85°C. The FH101 is available
in the environmentally friendly lead-free/green/RoHS-
compliant SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH101 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
4
12 3
Function
Gate
Drain
Source
Pin No.
1
3
2, 4
Specifications (1)
Typical Performance (6)
DC Electrical Parameter
Saturated Drain Current, Idss (2)
Transconductance, Gm
Pinch-off Voltage, Vp (3)
Units
mA
mS
V
Min
100
-3
Typ
140
120
-1.5
Max
170
RF Parameter
Operational Bandwidth
Test Frequency
Small-signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3 (4)
P1dB
Minimum Noise Figure (5)
Drain Bias
Gate Bias
Units
MHz
MHz
dB
dB
dBm
dBm
dB
V
V
Min Typ Max
50 – 4000
800
17 18
23
+32 +36
+18
0.77
+5
0
1. DC and RF parameters are measured under the following conditions unless otherwise noted:
25°C with Vds = 5V, Vgs = 0V, in a 50 Ω system.
2. Idss is measured with Vgs = 0V.
3. Pinch-off voltage is measured with Ids = 0.6 mA.
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The minimum noise figure has GS = GL = GOPT.
Parameter
Frequency
S21
S11
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S22
Output P1dB
Output IP3 (4)
Noise Figure
Drain Bias
Gate Voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
Typical
900 1960 2140
19 16.5 16.5
-11 -20 -22
-10 -9
-9
+18.8 +18.1 +19.1
+36 +36 +36
2.7 3.1 3.0
5V @ 140mA
0
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect
performance in an appropriate application circuit.
Absolute Maximum Rating
Parameter
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Gate Current
RF Input Power (continuous)
Thermal Resistance, Rth
Junction Temperature
Rating
-55 to +150 °C
+7 V
-6 V
4.5 mA
4 dB above Input P1dB
59 °C/W
+160 °C
Ordering Information
Part No.
FH101-G
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7” reel
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8902 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 1 of 7 June 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




FH101 pdf
FH101
High Dynamic Range FET
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Supply Voltage
Supply Current
Reference Design: 790 MHz, 19 dB Gain
GHz 746 790
dB 19.2 19.4
dB -20 -28
dB -22 -23
dBm +19
dBm +36
dB 2.3
V +5
mA 140
+5V
ID=C6
C=100 pF
ID=R7
R=560 Ohm
835
19.3
-15
-22
Gain / Return Loss
20 0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
19.5
-5
19 -10
18.5
-15
18 -20
17.5
-25
17
0.7
0.75 0.8 0.85
Frequency (GHz)
-30
0.9
ID=C4
C=1e4 pF
ID=C3
C=100 pF
ID=C1
C=100 pF
ID=C5
L=10 nH
ID=R6
R=560 Ohm
ID=R1
L=8.2 nH
NFETH=1"F0H11"
2
1
ID=L1
L=27 nH
ID=R2
L=2.2 nH
ID=C2
C=100 pF
Notes:
1. Circuit Board Material: .014” Getek ML200DSS (εr = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 Ω.
2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
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Reference Design: 790 MHz, 17 dB Gain
Frequency GHz 746 790 835
Gain dB 17.3 17.4 17.4
S11 dB -19 -19 -16
S22 dB -22 -22 -21
P1dB
dBm
+19
OIP3 dBm +36
Noise Figure dB 2.0 2.1 2.2
Voltage
V
+5
Current
mA
140
Gain / Return Loss
19 0
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R)
18 -5
17 -10
16 -15
15 -20
14
0.7
+5V
0.75 0.8
Frequency (GHz)
ID=C4
C=10000 pF
0.85
-25
0.9
Noise Figure vs. Frequency
4
25 °C 50 °C 90 °C
3
2
1
0
740 760 780 800 820 840
Frequency (MHz)
ID=C1
C=100 pF
ID=R6
R=360 Ohm
ID=R1
L=12 nH
ID=C6 ID=R7
C=100 pF R=360 Ohm
NFEHT1="0F1H1"
2
1
ID=C3
C=100 pF
ID=L1
L=33 nH
ID=C2
C=100 pF
ID=C5
R=10000 Ohm
Notes:
1. Circuit Board Material: .014” Getek ML200DSS (εr = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 Ω.
2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8902 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 5 of 7 June 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/

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