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IRF7313QPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7313QPBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7313QPBFダウンロード(pdfファイル)リンクがあります。 Total 7 pages
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N- Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
PD - 96125
IRF7313QPbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = 30V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.029Ω
Top View
www.DataSheet.net/
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30
± 20
6.5
5.2
30
2.5
2.0
1.3
82
Avalanche Current
IAR 4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
dv/dt
0.20
5.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Symbol
RθJA
Limit
62.5
Units
°C/W
1
09/04/07
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 Page 100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
IRF7313QPbF
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
www.DataSheet.net/
100 100
TJ = 25°C
TJ = 150°C
10
TJ = 150°C
10
TJ = 25°C
VDS = 10V
1
20µs PULSE WIDTH
A
3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
Datasheet pdf - http://www.DataSheet4U.co.kr/
3Pages IRF7313QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
6
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRF7313QPBF データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
IRF7313QPBF | HEXFET Power MOSFET | International Rectifier |