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PDF IXGH20N140C3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH20N140C3H1 | |
| Descripción | GenX3 1400V IGBTs | |
| Fabricantes | IXYS | |
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Advance Technical Information
GenX3TM 1400V IGBTs
w/ Diode
High-Speed PT IGBTs
for 20 - 50 kHz Switching
IXGH20N140C3H1
IXGT20N140C3H1
VCES =
IC100
VCE(sat)
=
≤
tfi(typ) =
1400V
20A
5.0V
32ns
TO-247 (IXGH)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC100
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 100°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1400
1400
V
V
±20 V
±30 V
42 A
20 A
108 A
20 A
400 mJ
ICM = 40
VCE ≤ VCES
250
www.DataSheet.co.kr
-55 ... +150
150
-55 ... +150
A
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE= 0V
TJ = 125°C, Note 1
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = IC100, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
100 μA
2.0 mA
±100 nA
4.0 5.0 V
3.5 V
G
CE
C (Tab)
TO-268 (IXGT)
G
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z High Avalanche Capability
z Anti-Parallel Ultra Fast Diode
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS100251(03/10)
Datasheet pdf - http://www.DataSheet4U.net/
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