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PDF TT8U1 Data sheet ( Hoja de datos )
| Número de pieza | TT8U1 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TT8U1 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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1.5V Drive Pch +SBD MOSFET
TT8U1
zStructure
Silicon P-channel MOSFET / schottky barrier diode
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications
Type
TT8U1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗2
Limits
−20
±10
±2.4
±9.6
−0.8
−9.6
150
1.0
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : U01
Each lead has same dimensions
zInner circuit
(8) (7)
(6) (5)
∗1
www.DataSheet.co.kr
(1)
(2)
(3)
∗1 BODY DIODE
(1) Anode
(2) Anode
(3) Source
(4) Gate
(4)
(5) Drain
(6) Drain
(7) Cathode
(8) Cathode
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60HZ / 1Cycle
∗2 Mounted on a ceramic board
Symbol
VRM
VR
IF
IFSM ∗1
Tj
PD ∗2
Limits
30
20
1.0
3.0
150
1.0
Unit
V
V
A
A
°C
W / ELEMENT
<MOSFET and Di>
Parameter
Total power dissipation
Range of Storage temperature
∗ Mounted on a ceramic board
Symbol
PD ∗
Tstg
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
Limits
1.25
−55 to +150
Unit
W / TOTAL
°C
1/5
2009.06 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
TT8U1
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
Pulse width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
www.DataSheet.co.kr
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.06 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TT8U1.PDF ] | |
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