|
|
PDF TT8M1 Data sheet ( Hoja de datos )
| Número de pieza | TT8M1 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TT8M1 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
1.5V Drive Nch + Pch MOSFET
TT8M1
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol :M01
Application
Switching
Packaging specifications
Package
Taping
Type Code
TR
Basic ordering unit (pieces) 3000
TT8M1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
www.DataSheet.co.kr
Tr1 : N-ch Tr2 : P-ch
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
*2
PD
Tch
Tstg
20 20
10 10
2.5 2.5
10 10
0.8 0.8
10 10
1.25
1
150
55 to +150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Inner circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/8
2010.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
TT8M1
Data Sheet
10
VGS=0V
Pulsed
1
Ta= 125°C
0.1 Ta= 75°C
Ta= 25°C
Ta= − 25°C
0.01
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
200
Ta=25°C
Pulsed
150 ID= 2.5A
ID= 1.25A
100
50
0
0 5 10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
td(on)
10
tf
td(off)
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
t
1
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.12 Switching Characteristics
5
4
3
2 Ta=25°C
VDD=10V
1 ID=2.5A
RG=10Ω
0 Pulsed
012345
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
1000
100
Crss
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
10
0.01
0.1
1
10 100
www.DataSheet.co.kr
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
5/8
2010.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TT8M1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TT8M1 | MOSFET ( Transistor ) | ROHM Semiconductor |
| TT8M11 | MOSFET ( Transistor ) | ROHM Semiconductor |
| TT8M2 | MOSFET ( Transistor ) | ROHM Semiconductor |
| TT8M3 | MOSFET ( Transistor ) | ROHM Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |