|
|
Número de pieza | TT8K11 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TT8K11 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
4V Drive Nch + Nch MOSFET
TT8K11
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low voltage drive(4V drive).
3) Small surface mount package(TSST8).
Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Application
Switching
Abbreviated symbol : K11
Packaging specifications
Inner circuit
Type
TT8K11
Package
Code
Basic ordering unit (pieces)
Taping
TCR
3000
www.DataSheet.co.kr
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
30
20
3
12
0.8
12
1.25
1.0
Channel temperature
Tch 150
Range of storage temperature
Tstg 55 to 150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
(8)
(7) (6)
(5)
∗2 ∗2
∗1 ∗1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
100
125
Unit
C / W/ TOTAL
C / W/ ELEMENT
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page TT8K11
Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage
1000
Ta=25°C
f=1MHz
VGS=0V
100 Ciss
10
0.01
Coss
Crss
0.1 1 10
Drain-Source Voltage : VDS [V]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse : 1Unit
1
Fig.14 Maximum Safe Operating Area
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
10
1
0.1
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.01
0.1 1
10
Drain-Source Voltage : VDS [ V ]
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
100
0.1
0.01
0.001
0.0001 0.001
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=125°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1 1 10
Pulse width : Pw (s)
100 1000
www.DataSheet.co.kr
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TT8K11.PDF ] |
Número de pieza | Descripción | Fabricantes |
TT8K1 | MOSFET ( Transistor ) | ROHM Semiconductor |
TT8K11 | MOSFET ( Transistor ) | ROHM Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |