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PDF TT8J13 Data sheet ( Hoja de datos )
| Número de pieza | TT8J13 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Data Sheet
1.5V Drive Pch + Pch MOSFET
TT8J13
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
TSST8
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive(1.5V drive).
(8) (7) (6) (5)
(1) (2) (3) (4)
Application
Switching
Abbreviated symbol : J13
Inner circuit
(8) (7) (6) (5)
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
TT8J13
Taping
TCR
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
Is
Isp *1
Power dissipation
PD *2
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Tch
Tstg
Limits
www.DataSheet.co.kr
Unit
12 V
0 to 8
V
2.5 A
5 A
0.8 A
5 A
1.25 W / TOTAL
1 W / ELEMENT
150
55 to 150
C
C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2 ∗2
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
100
125
Unit
˚C / W /TOTAL
˚C / W /ELEMENT
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.03 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
TT8J13
Fig.13 Dynamic Input Characteristics
5
4
3
2
Ta=25°C
1 VDD= -6V
ID= -2.5A
Pulsed
0
0 5 10 15 20
TOTAL GATE CHARGE : Qg [nC]
10000
1000
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Data Sheet
100
Coss
10
0.01
Crss Ta=25°C
f=1MHz
VGS=0V
0.1 1 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
100
www.DataSheet.co.kr
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.03 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TT8J13.PDF ] | |
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