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RJP60F4DPM の電気的特性と機能

RJP60F4DPMのメーカーはRenesasです、この部品の機能は「N-Channel IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 RJP60F4DPM
部品説明 N-Channel IGBT
メーカ Renesas
ロゴ Renesas ロゴ 




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RJP60F4DPM Datasheet, RJP60F4DPM PDF,ピン配置, 機能
RJP60F4DPM
600 V - 30 A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
PC
j-c
Tj
Tstg
Preliminary Datasheet
R07DS0586EJ0100
Rev.1.00
Nov 25, 2011
C
1. Gate
2. Collector
3. Emitter
E
Ratings
600
30
60
30
120
41.2
3.03
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





RJP60F4DPM pdf, ピン配列
RJP60F4DPM
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Tc = 25°C
1 shot pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
120
VCE = 10 V
100 Pulse Test
80
60
40 Tc = 75°C
20
2C
25°C
0
4 6 8 10 12 14
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
VGE = 15 V
Pulse Test
1.8
IC = 60 A
1.6
30 A
1.4
15 A
1.2
1.0
25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
www.DataSheet.co.kr
Preliminary
Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
11 V
10 V
12 V
80
15 V
9.5 V
60
9V
40
8.5 V
20
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.4
IC = 60 A
1.8
1.2
0.6
6
30 A
15 A
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
VCE = 10 V
8
6
IC = 10 mA 1 mA
4
2
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 3 of 6
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


RJP60F4DPM 電子部品, 半導体
RJP60F4DPM
Package Dimensions
Package Name
TO-3PFM
JEITA Package Code
SC-93
RENESAS Code
Previous Code MASS[Typ.]
PRSS0003ZA-A TO-3PFM / TO-3PFMV
5.2g
15.6 ± 0.3
φ3.2
+
0.4
0.2
5.5 ± 0.3
Preliminary
Unit: mm
4.0 ± 0.3
2.6
0.86
5.45 ± 0.5
1.6
0.86
0.66
+
0.2
0.1
5.45 ± 0.5
3.2 ± 0.3
0.9
+
0.2
0.1
Ordering Information
Orderable Part Number
RJP60F4DPM-00#T1
360 pcs
www.DataSheet.co.kr
Quantity
Shipping Container
Box (Tube)
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 6 of 6
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



ページ 合計 : 7 ページ
 
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共有リンク

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部品番号部品説明メーカ
RJP60F4DPM

N-Channel IGBT

Renesas
Renesas


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