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Datasheet 60N100D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 60N100D | FGL60N100D FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
Features
• � |  Fairchild Semiconductor | data |
60N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 60N03 | Power MOSFET, Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications
• Power Supplies • Converters • Pow  Tuofeng Semiconductor mosfet | | |
| 2 | 60N03 | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
AF60N03
Features
- Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product
Product Summary
BVDSS (V) 30
RDS(ON) (mΩ) 12
ID (A) 45
General Description
The advanced power MOSFET provides the designe  Anachip mosfet | | |
| 3 | 60N03 | N-Ch 30V Fast Switching MOSFETs CMD60N03/CMU60N03
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The 60N03 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchron  Cmos mosfet | | |
| 4 | 60N035 | N-Channel Field Effect Transistor Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotiv  ETC transistor | | |
| 5 | 60N03GP | AP60N03GP AP60N03GS/P
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 13.5mΩ 55A
▼ Simple Drive Requirement
G S
Description
The Advanced Power MOSFETs from APEC provid  Advanced Power Electronics data | | |
| 6 | 60N03L-10 | ST60N03L-10 STB60N03L-10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMIRARY DATA TYPE STB60N03L-10
s s s s s s s s
V DSS 30 V
R DS(on) < 0.01 Ω
ID 60 A
s
s
TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW  STMicroelectronics data | | |
| 7 | 60N03S | AP60N03S AP60N03S
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
GD S
30V 13.5mΩ 55A
▼ Simple Drive Requirement
TO-263
Description
The Advanced Power MOSFETs from APEC provide the designer with t Advanced Power Electronics data | |
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