(PDF) 1N5553US Datasheet - (1N5550US - 1N5554US) Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode

Número de pieza	1N5553US
Descripción	(1N5550US - 1N5554US) Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode
Fabricantes	Semtech
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No Preview Available ! POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550US THRU 1N5554US Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode Features Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, and JANTXV versions. Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Units Working Reverse Voltage Average Forward Current @55 °C in free air, lead length 0.375" Repetitive Surge Current @55 °C in free air, lead length 0.375" Non-Repetitive Surge Current (tp = 8.3mS @ VR & TJMAX) (tp = 8.3mS, @ VR& 25 °C) Storage Temperature Range VRWM IF(AV) IFRM IFSM TSTG 200 400 www.DataSheet.co.kr 600 800 5.0 25 100 150 -65 to +175 1000 V A A A °C Revision: August 22nd, 2011 1 www.semtech.com Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF 1N5553US Data sheet ( Hoja de datos )