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IRLMS6702PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLMS6702PBF
部品説明 Power MOSFET
メーカ IRF
ロゴ IRF ロゴ 



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IRLMS6702PBF Datasheet, IRLMS6702PBF PDF,ピン配置, 機能
PD - 95224
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
l P-Channel MOSFET
l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
IRLMS6702PbF
HEXFET® Power MOSFET
D1
A
6D
D2
5D
G3
4S
Top View
VDSS = -20V
RDS(on) = 0.20
www.DataSheet.co.kr
Micro6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-2.4
-1.9
-13
1.7
13
± 12
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
www.irf.com
Min.
–––
Typ.
–––
Max
75
Units
°C/W
1
1/14/05
Datasheet pdf - http://www.DataSheet4U.net/

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