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IRLMS6702PBF の電気的特性と機能

IRLMS6702PBFのメーカーはIRFです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLMS6702PBF
部品説明 Power MOSFET ( Transistor )
メーカ IRF
ロゴ IRF ロゴ 




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IRLMS6702PBF Datasheet, IRLMS6702PBF PDF,ピン配置, 機能
PD - 95224
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
l P-Channel MOSFET
l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
IRLMS6702PbF
HEXFET® Power MOSFET
D1
A
6D
D2
5D
G3
4S
Top View
VDSS = -20V
RDS(on) = 0.20
www.DataSheet.co.kr
Micro6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-2.4
-1.9
-13
1.7
13
± 12
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
www.irf.com
Min.
–––
Typ.
–––
Max
75
Units
°C/W
1
1/14/05
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





IRLMS6702PBF pdf, ピン配列
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM -1.75V
10
IRLMS6702PbF
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM -1.75V
10
1
-1.75V
0.1
0.1
20µs PULSE WIDTH
TJ = 25°C
A
1 10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
-1.75V
0.1
0.1
20µs PULSE WIDTH
TJ = 150°C
1
A
10
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
www.DataSheet.co.kr
2.0
ID = -1.6A
10
TJ = 25°C
TJ = 150°C
1
0.1
1.5
VDS = -10V
20µs PULSE WIDTH
A
2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = -4.5V
A
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


IRLMS6702PBF 電子部品, 半導体
IRLMS6702PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
„
-+

RG
VGS*
**
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
VDD*
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
www.DataSheet.co.kr
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[VDD]
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-channel HEXFET® power MOSFETs
6
www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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部品番号部品説明メーカ
IRLMS6702PBF

Power MOSFET ( Transistor )

IRF
IRF


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