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07N60C3 PDF Data sheet ( 特性 )

部品番号 07N60C3
部品説明 Power Transistor
メーカ Infineon
ロゴ Infineon ロゴ 



Total 15 pages
		

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07N60C3 Datasheet, 07N60C3 PDF,ピン配置, 機能
SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
0.6
7.3
V
A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
High peak current capability
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP07N60C3
SPI07N60C3
SPA07N60C3
Package
PG-TO220-3
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4400
Q67040-S4424
SP000216303
Marking
07N60C3
07N60C3
07N60C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
7.3
4.6
21.9
230
7.31)
4.61)
21.9
230
0.5 0.5
7.3 7.3
±20 ±20
±30 ±30
83 32
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
Page 1
2009-11-27

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