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RCD060N25 の電気的特性と機能

RCD060N25のメーカーはROHM Semiconductorです、この部品の機能は「Drive Nch MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 RCD060N25
部品説明 Drive Nch MOSFET
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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RCD060N25 Datasheet, RCD060N25 PDF,ピン配置, 機能
Data Sheet
10V Drive Nch MOSFET
RCD060N25
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
0.5
1.0
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCD060N25
Taping
TL
2500
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
VGSS
30
ID *3
6
IDP *1,3
IS
24
6
ISP *1
24
IAS *2
3
EAS *2
2.62
PD *4
20
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)*
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
6.25
Unit
C / W
Inner circuit
1
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





RCD060N25 pdf, ピン配列
RCD060N25
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics ()
2
Ta=25°C
Pulsed
1.5
VGS=10.0V
VGS=8.0V
1
VGS=7.0V
0.5
 
0
0 0.2 0.4 0.6 0.8
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
10
VDS=10V
pulsed
1 Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
1
0.01
www.DataSheet.co.kr
Data Sheet
Fig.2 Typical Output Characteristics ()
6
Ta=25°C
Pulsed
5
VGS=10.0V
VGS=8.0V
4
3
2
VGS=7.0V
1
0
0 2 4 6 8 10
Drain-Source Voltage : VDS [V]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
6
VDS=10V
ID=1mA
pulsed
5
4
3
0.001
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
Gate-Source Voltage : VGS [V]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10
VGS=10V
pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
2
-50 -25 0 25 50 75 100 125 150
Channel Temperature : Tch []
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
1.5
VGS=10V
pulsed
1
ID=6A
0.5
ID=3A
0.1
0.01
0.1 1
Drain Current : ID [A]
10
0
-50 -25
0 25 50 75 100 125 150
Channel Temperature : Tch []
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


RCD060N25 電子部品, 半導体
RCD060N25
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
 
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.3-1 Avalanche Measurement Circuit
V(BR)DSS
IAS
VDD
www.DataSheet.co.kr
EAS =
1
2
L IAS2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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部品番号部品説明メーカ
RCD060N25

Drive Nch MOSFET

ROHM Semiconductor
ROHM Semiconductor


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