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2SC3929AのメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon NPN epitaxial planer type(For low-frequency output amplification)」です。 |
部品番号 | 2SC3929A |
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部品説明 | Silicon NPN epitaxial planer type(For low-frequency output amplification) | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SC3929Aダウンロード(pdfファイル)リンクがあります。 Total 3 pages
Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC3929
base voltage 2SC3929A
VCBO
35
55
Collector to 2SC3929
emitter voltage 2SC3929A
VCEO
35
55
Emitter to base voltage
VEBO
5
Peak collector current
ICP
100
Collector current
IC
50
Collector power dissipation PC
150
Junction temperature
Tj
150
Storage temperature
Tstg –55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : S(2SC3929)
T(2SC3929A)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SC3929
2SC3929A
ICBO
ICEO
VCBO
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
100 nA
1 µA
35
V
55
Collector to emitter 2SC3929
voltage
VCEO
2SC3929A
IC = 2mA, IB = 0
35
55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
VEBO
hFE*
VCE(sat)
VBE
Noise voltage
NV
Transition frequency
*1hFE1 Rank classification
fT
IE = 10µA, IC = 0
5
V
VCE = 5V, IC = 2mA
180 700
IC = 100mA, IB = 10mA
0.6 V
VCE = 1V, IC = 100mA
0.7 1
V
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150 mV
VCB = 5V, IE = –2mA, f = 200MHz
80 MHz
Rank
RST
hFE
Marking 2SC3929
Symbol 2SC3929A
180 ~ 360
SR
TR
260 ~ 520
SS
TS
360 ~ 700
ST
TT
1
1 Page Transistor
NV — VCE
300
Rg=100kΩ
240
IC=1mA
GV=80dB
Function=RIAA
180
120
22kΩ
60
4.7kΩ
0
1 3 10 30 100
Collector to emitter voltage VCE (V)
NV — Rg
160
VCE=10V
140 GV=80dB
Function=FLAT
120
100
80
IC=1mA
60
0.5mA
40
0.1mA
20
0
1 3 10 30 100
Signal source resistance Rg (kΩ)
NV — IC
160
VCE=10V
140 GV=80dB
Function=FLAT
120
100
80 Rg=100kΩ
60
22kΩ
40
4.7kΩ
20
0
0.01 0.03 0.1 0.3
1
Collector current IC (mA)
NV — Rg
300
VCE=10V
GV=80dB
Function=RIAA
240
180
IC=1mA
120
0.5mA
60
0.1mA
0
13
10 30 100
Signal source resistance Rg (kΩ)
2SC3929, 2SC3929A
NV — IC
300
VCE=10V
GV=80dB
Function=RIAA
240
180
120 Rg=100kΩ
60 22kΩ
4.7kΩ
0
0.01 0.03 0.1 0.3
1
Collector current IC (mA)
3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ 2SC3929A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SC3929 | Silicon NPN epitaxial planer type(For low-frequency output amplification) | Panasonic Semiconductor |
2SC3929 | Silicon NPN Epitaxial Planar | Kexin |
2SC3929A | Silicon NPN epitaxial planer type(For low-frequency output amplification) | Panasonic Semiconductor |
2SC3929A | Silicon NPN Epitaxial Planar | Kexin |