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2SC3780のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP/NPN Epitaxial Planar Silicon Transistors」です。 |
部品番号 | 2SC3780 |
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部品説明 | PNP/NPN Epitaxial Planar Silicon Transistors | ||
メーカ | Sanyo Semicon Device | ||
ロゴ | |||
このページの下部にプレビューと2SC3780ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Ordering number:EN2526
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1474/2SC3780
Ultrahigh-Definition CRT Display
Video Output Applications
Applications
· Video Output.
· Color TV chroma output.
· Wide-band amp.
Features
· High fT (fT typ=800MHz).
· Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=3.0pF (NPN), 4.7pF (PNP).
· Complementary PNP and NPN types.
· Adoption of FBET process.
Package Dimensions
unit:mm
2010C
[2SA1474/2SC3780]
( ) : 2SA1474
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=50˚C
JEDEC : TO-220AB
EIAJ : SC-46
E : Emitter
C : Collector
B : Base
Conditions
Ratings
(–)80
(–)60
(–)4
(–)800
(–)1
1.5
15
150
–55 to +150
Unit
V
V
V
mA
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)60V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)50mA
VCE=(–)10V, IC=(–)400mA
VCE=(–)10V, IC=(–)100mA
IC=(–)100mA, IB=(–)10mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
IC=(–)100mA, IB=(–)10MA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)100µA, IC=0
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
*: The 2SA1474/2SC3780 are classified by 50mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
Ratings
min typ
40*
20
800
(–)80
(–)60
(–)4
3.5
(5.3)
3.0
(4.7)
max
(–)0.1
(–)1.0
320*
0.6
(–0.8)
(–)1.0
Unit
µA
µA
MHz
V
V
V
V
V
V
pF
pF
pF
pF
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4077TA, TS No.2526-1/4
1 Page 2SA1474/2SC3780
No.2526-3/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ 2SC3780 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SC3780 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
2SC3781 | Very High-Definition CRT Display/ Video Output Applications | Sanyo Semicon Device |
2SC3782 | Very High-Definition CRT Display/ Video Output Applications | Sanyo Semicon Device |
2SC3783 | NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING/ SWITCHING REGULATOR/ HIGH SPEED DC-DC CONVERTER APPLICATIONS) | Toshiba Semiconductor |