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PDF GWM100-01X1 Data sheet ( Hoja de datos )

Número de pieza GWM100-01X1
Descripción Three phase full Bridge
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 100-01X1
VDSS = 100 V
ID25 = 90 A
RDSon typ. = 7.5 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25 TC = 25°C
ID90 TC = 90°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
Maximum Ratings
100 V
± 20 V
90 A
68 A
90 A
68 A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 80 A
VDS = 20 V; ID = 250 µA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 65 V; ID = 90 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = 10 V; VDS = 48 V
ID = 70 A; RG = 33 ;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + 2RPin to )Chip
7.5
14
2.5
0.1
90
30
30
130
95
290
55
0.4
0.4
0.007
1.3
8.5 mW
mW
4.5 V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead frames available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307e
1-6
Datasheet pdf - http://www.DataSheet4U.net/

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GWM100-01X1 pdf
www.DataSheet.co.kr
GWM 100-01X1
14
12
ID = 90 A
TJ = 25°C
10
8
VDS = 20 V
VDS = 65 V
6
4
2
0
0 20 40 60 80 100
QG [nC]
Fig.7 Gate charge characteristic
120
0.6
VDS = 48 V
0.5 VGS = +10/0 V
RG = 33 Ω
0.4 TJ = 125°C
300
250
200
0.3
0.2
Eon
0.1
td(on) 150
tr 100
50
0.0
0
Erec(off) x10
0
10 20 30 40 50 60 70 80 90 100
ID [A]
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
1.6
1.4
VDS = 48 V
VGS = +10/0 V
1.2 ID = 90 A
TJ = 125°C
1.0
0.8
Eon
400
350
td(on)
300
250
tr 200
0.6 150
0.4 100
0.2
0.0
0
Erec(off) x10
50
0
10 20 30 40 50 60 70 80 90 100
RG [Ω]
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
120
TJ = 175°C
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC [°C]
Fig. 8 Drain current ID vs. case temperature TC
0.6
VDS = 48 V
0.5 VGS = +10/0 V
RG = 33 Ω
0.4 TJ = 125°C
600
500
400
0.3 td(off) 300
0.2 200
0.1 Eoff
100
tf
0.0 0
0 10 20 30 40 50 60 70 80 90 100
ID [A]
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
1.2
VDS = 48 V
1.0 VGS = +10/0 V
ID = 90 A
0.8 TJ = 125°C
0.6
1200
1000
td(off)
800
600
0.4
Eoff
400
0.2 200
tf
0.0 0
0 10 20 30 40 50 60 70 80 90 100
RG [Ω]
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
20110307e
5-6
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