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PDF GWM100-0085X1 Data sheet ( Hoja de datos )

Número de pieza GWM100-0085X1
Descripción Three phase full Bridge
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM100-0085X1
VDSS = 85 V
ID25 = 103 A
RDSon typ. = 5.5 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25
ID90
ID110
TC = 25°C
TC = 90°C
TC = 110°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
IF110 TC = 110°C (diode)
Maximum Ratings
85 V
± 20 V
103 A
77 A
68 A
tbd A
tbd A
tbd A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 75 A
VDS = 20 V; ID = 250 µA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 42 V; ID = 75 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = 10 V; VDS = 42 V
ID = 75 A; RG = 39 ;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + RPin to )Chip
5.5
12.7
2.0
100
114
30
35
tbd
tbd
tbd
tbd
tbd
tbd
tbd
1.3
6.2 mW
mW
4.0 V
5 µA
µA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
1-3
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