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PDF 2SC3604 Data sheet ( 特性 )

部品番号 2SC3604
部品説明 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
メーカ NEC
ロゴ NEC ロゴ 

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2SC3604 Datasheet, 2SC3604 PDF,ピン配置, 機能
DATA SHEET
SILICON TRANSISTOR
2SC3604
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3604 is an NPN epitaxial transistor designed for low-
noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
FEATURES
Low noise
: NF = 1.6 dB TYP. @ f = 2.0 GHz
High power gain : GA = 12 dB TYP. @ f = 2.0 GHz
3.8 MIN.
C
3.8 MIN.
B
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL RATING
VCBO
20
VCEO
10
VEBO
1.5
IC 65
PT (TC = 25 °C)
580
Tj 200
Tstg -65 to +150
UNIT
V
V
V
mA
mW
°C
°C
45 °
E
0.5 ± 0.05
2.55 ± 0.2
φ 2.1
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Insertion Gain
Maximum Available Gain
Power Gain
SYMBOL
TEST CONDITIONS
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 8 V, IC = 20 mA Pulse
fT VCE = 8 V, IC = 20 mA
Cre
NFNote
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 8 V, IC = 7 mA, f = 2.0 GHz
|S21e|2 VCE = 8 V, IC = 20 mA, f = 2.0 GHz
MAG VCE = 8 V, IC = 20 mA, f = 2.0 GHz
GA VCE = 8 V, IC = 7 mA, f = 2.0 GHz
MIN.
50
9.0
TYP.
100
8
0.2
1.6
11
13
12
MAX.
1.0
1.0
250
0.7
2.3
UNIT
µA
µA
GHz
pF
dB
dB
dB
dB
Document No. P11675EJ2V0DS00 (2nd edition)
Date Published August 1996 P
Printed in Japan
© 1996

1 Page





2SC3604 pdf, ピン配列
2SC3604
INSERTION GAIN vs.
COLLECTOR CURRENT
15
f = 2 GHz
10 3 GHz
4 GHz
5
VCE = 8 V
0
0.5 1
5 10
IC - Collector Current - mA
50 70
NOISE FIGURE vs. COLLECTOR CURRENT
6
VCE = 8 V
f = 2 GHz
5
4
3
2
12
5 10 20
IC - Collector Current - mA
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
30
VCE = 8 V
20
10
7
5
3
2
1
23
5 7 10
20 30
IC - Collector Current - mA
S PARAMETER
VCE = 6 V, IC = 10 mA, ZO = 50
f (MHz)
|S11|
S11
500 .463 -125.3
1000
.432 -162.7
1500
.416 178.7
2000
.439 165.0
2500
.451 153.6
3000
.470 143.6
3500
.482 135.2
4000
.494 129.1
|S21|
13.822
7.901
5.250
3.949
3.151
2.809
2.337
2.022
S21
106.8
86.2
71.1
59.7
51.7
39.6
28.6
21.3
|S12|
.027
.0424
.0606
.0758
.097
.111
.124
.132
S12
37.9
48.2
53.1
52.0
49.3
45.1
39.5
35.5
|S22|
.516
.463
.421
.396
.372
.345
.320
.321
S22
-36.6
-40.7
-46.2
-50.9
-56.5
-63.7
-73.2
-82.0
3


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