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PDF PSMN8R5-60YS Data sheet ( Hoja de datos )
| Número de pieza | PSMN8R5-60YS | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Rev. 01 — 22 December 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 60 V
- - 76 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 3
- - 106 W
Tj junction temperature
Avalanche ruggedness
-55 -
175 °C
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 76 A; Vsup ≤ 60 V;
RGS = 50 Ω; unclamped
- - 97 mJ
QGD gate-drain charge
QG(tot) total gate charge
VGS = 10 V; ID = 60 A;
VDS = 30 V; see Figure 15 and 14
VGS = 10 V; ID = 60 A;
VDS = 30 V; see Figure 14 and 15
-
-
7.7 -
39 -
nC
nC
Datasheet
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NXP Semiconductors
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- 0.63 1.42 K/W
1
Zth(j-mb)
(K/W)
d = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
single shot
003aad834
P δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN8R5-60YS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 December 2009
© NXP B.V. 2009. All rights reserved.
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NXP Semiconductors
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
L1
HD
E
A
A2
C
b2 c2
mounting
base
D1
L2
1 2 34
e b wM A
1/2 e
X
c
E1
b3
b4
A
A1 C
detail X
(A3)
θ
L
yC
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 A2 A3
b
b2 b3 b4
c
c2
D (1)
D1(1)
max
E(1)
E1(1)
e
H
L L1
mm 1.20 0.15 1.10 0.25 0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 1.27 6.2 0.85 1.3
1.01 0.00 0.95
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
5.8 0.40 0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
L2 w y
1.3 0.25 0.1
0.8
θ
8°
0°
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT669
MO-235
EUROPEAN
PROJECTION
ISSUE DATE
04-10-13
06-03-16
Fig 18. Package outline SOT669 (LFPAK)
PSMN8R5-60YS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 December 2009
© NXP B.V. 2009. All rights reserved.
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