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IXFH30N50Q3のメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXFH30N50Q3 |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFH30N50Q3ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.DataSheet.co.kr
HiperFETTM
Power MOSFETs
Q3-Class
Advance Technical Information
IXFT30N50Q3
IXFH30N50Q3
VDSS =
ID25 =
RDS(on) ≤
500V
30A
200mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
500
500
± 20
± 30
30
90
30
1.5
V
V
V
V
A
A
A
J
50
690
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4.0
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.5 6.5 V
±100 nA
10 μA
500 μA
200 mΩ
TO-268 (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Low Intrinsic Gate Resistance
z International Standard Packages
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Temperature and Lighting Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100338(05/11)
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
Fig. 1. Output Characteristics @ TJ = 25ºC
30
VGS = 10V
9V
25
20
8V
15
10
7V
5
6V
0
0123456
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
30
VGS = 10V
8V
25
20
7V
15
10
6V
5
5V
0
0 2 4 6 8 10 12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 15A Value vs.
Drain Current
3.4
VGS = 10V
3.0
2.6
TJ = 125ºC
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0 10 20 30 40 50
ID - Amperes
14
60
IXFT30N50Q3
IXFH30N50Q3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
VGS = 10V
60
9V
50
40
30
20
10
0
0
8V
7V
6V
5 10 15 20 25
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.
Junction Temperature
3.4
VGS = 10V
3.0
2.6
I D = 30A
2.2
1.8 I D = 15A
30
1.4
1.0
0.6
0.2
-50
35
-25 0
25 50 75 100 125
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
150
30
25
20
15
10
5
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
Datasheet pdf - http://www.DataSheet4U.net/
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFH30N50Q3 | Power MOSFET ( Transistor ) | IXYS Corporation |