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PDF IXFB82N60Q3 Data sheet ( Hoja de datos )
| Número de pieza | IXFB82N60Q3 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
HiperFETTM
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
IXFB82N60Q3
VDSS =
ID25 =
≤RDS(on)
trr ≤
600V
82A
75mΩ
300ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
600
600
V
V
±30 V
±40 V
82 A
240 A
82 A
4J
50 V/ns
1560
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260
30..120/6.7..27
°C
N/lb.
10 g
PLUS264TM
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Low Intrinsic Gate Resistance
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.5 6.5 V
±200 nA
50 μA
3 mA
75 mΩ
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Temperature and Lighting Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100339(05/11)
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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0.1
Fig. 13. Maximum Transient Thermal Impedance
IXFB82N60Q3
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_82N60Q3(Q9) 5-19-11
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet IXFB82N60Q3.PDF ] | |
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