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88N04 の電気的特性と機能

88N04のメーカーはNECです、この部品の機能は「 NP88N04」です。


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部品番号 88N04
部品説明 NP88N04
メーカ NEC
ロゴ NEC ロゴ 




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88N04 Datasheet, 88N04 PDF,ピン配置, 機能
www.DataSheet.co.kr
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04EHE, NP88N04KHE
NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP88N04EHE-E1-AY Note1, 2
NP88N04EHE-E2-AY Note1, 2
NP88N04KHE-E1-AY Note1
NP88N04KHE-E2-AY Note1
NP88N04CHE-S12-AZ Note1, 2
NP88N04DHE-S12-AY Note1, 2
NP88N04MHE-S18-AY Note1
NP88N04NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
Low input capacitance
Ciss = 7300 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14236EJ8V0DS00 (8th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





88N04 pdf, ピン配列
www.DataSheet.co.kr
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage
IGSS
VGS(th)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 44 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
td(on)
tr
td(off)
VDD = 20 V, ID = 44 A,
VGS = 10 V,
RG = 1 Ω
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG VDD = 32 V,
QGS
QGD
VGS = 10 V,
ID = 88 A
Body Diode Forward Voltage
VF(S-D)
IF = 88 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 88 A, VGS = 0 V,
Qrr di/dt = 100 A/μs
MIN.
2.0
30
TYP.
3.0
60
3.4
7300
1400
620
38
27
110
32
120
30
43
0.95
64
99
MAX.
10
±10
4.0
4.3
11000
2100
1120
84
68
220
80
180
UNIT
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D14236EJ8V0DS
3
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


88N04 電子部品, 半導体
www.DataSheet.co.kr
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
Figure12. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
9
8
7
6
5
VGS = 10 V
4
3
2
1
0 ID = 44 A
50 0 50 100 150
Tch - Channel Temperature - °C
Figure14. CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Diode Forward Current - A
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
VGS = 10 V
100
0V
10
1
0.1
0 0.5 1.0 1.5
VF(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
100
tf
td(on)
td(off)
tr
10
VDD = 20 V
VGS = 10 V
1 RG = 1 Ω
0.1
1
10
ID - Drain Current - A
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
10
9
VDD = 32 V
20 V
8V
8
7
VGS 6
5
4
3
2
VDS
1
ID = 88 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
6 Data Sheet D14236EJ8V0DS
Datasheet pdf - http://www.DataSheet4U.net/

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部品番号部品説明メーカ
88N04

NP88N04

NEC
NEC


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