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75N08 の電気的特性と機能

75N08のメーカーはFairchild Semiconductorです、この部品の機能は「 FDP75N08」です。


製品の詳細 ( Datasheet PDF )

部品番号 75N08
部品説明 FDP75N08
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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75N08 Datasheet, 75N08 PDF,ピン配置, 機能
www.DataSheet.co.kr
FDP75N08
75V N-Channel MOSFET
Features
• 75A, 75V, RDS(on) = 0.011@VGS = 10 V
• Low gate charge ( typical 150 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
June 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FDP Series
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
S
FDP75N08
75
75
47.7
300
± 20
1164
75
13.1
4.5
131
1
-55 to +150
300
FDP75N08
0.95
0.5
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FDP75N08 Rev. A
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





75N08 pdf, ピン配列
www.DataSheet.co.kr
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top: 15.0V
9.0V
7.5V
7.0V
6.5v
6.0V
102
5.5V
5.0V
Bottom : 4.5V
101
100
* Note :
1. 250µs Pulse Test
2. T =250C
C
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
100
1500C
250C
10
-550C
* Note :
1. V =40V
DS
2. 250µs Pulse Test
1
2468
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
0.012
0.011
0.010
V = 10V
GS
0.009
0.008
0.007
0
V = 20V
GS
* Note : T = 25oC
J
25 50 75 100 125 150 175 200
I , Drain Current [A]
D
102
101
100
0.2
1500C
250C
* Note :
1. V =0V
GS
2. 250µs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
V , Source-Drain Violtage [V]
DS
1.6
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10-1
C
oss
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
* Note :
1. V = 0 V
C
rss
GS
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
10
V = 37.5V
DS
V = 60V
DS
8
6
4
2
* Note : I = 75A
D
0
0 10 20 30 40 50 60 70 80
Q , Total Gate Charge [nC]
G
FDP75N08 Rev. A
3 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


75N08 電子部品, 半導体
www.DataSheet.co.kr
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP75N08 Rev. A
6 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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