|
|
16N50CのメーカーはVishay Siliconixです、この部品の機能は「SIHF16N50C」です。 |
部品番号 | 16N50C |
| |
部品説明 | SIHF16N50C | ||
メーカ | Vishay Siliconix | ||
ロゴ | |||
このページの下部にプレビューと16N50Cダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560 V
VGS = 10 V
68
17.6
21.8
Single
TO-220AB
TO-220 FULLPAK
0.38
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
S
D
G
D2PAK (TO-263)
GDS
G
GD
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP16N50C-E3
D2PAK (TO-263)
SiHB16N50C-E3
TO-220 FULLPAK
SiHF16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
LIMIT
PARAMETER
TO220-AB
SYMBOL D2PAK (TO-263)
TO-220
FULLPAK
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ± 30
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
16
10
40
Linear Derating Factor
2
Single Pulse Avalanche Energyb
EAS 320
Maximum Power Dissipation
PD 250
38
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
- 55 to + 150
300
Notes
a. Limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
UNIT
V
A
W/°C
mJ
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
VGS
45 TOP 15 V
14 V
40
13 V
12 V
11 V
35 10 V
9.0 V
30 8.0 V
7.0 V
25
6.0 V
BOTTOM 5.0 V
20
15
TJ = 25 °C
10
5
0
0
7.0 V
5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-220)
45
40
35
30
25
20
15
TJ = 150 °C
10
5 TJ = 25 °C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
30
VGS
TOP
15 V
25
14 V
13 V
12 V
11 V
20
10 V
9.0 V
8.0 V
7.0 V
15
6.0 V
BOTTOM 5.0 V
10
5
TJ = 150 °C
7.0 V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-220)
3
ID = 16 A
2.5
2
1.5
1
0.5
VGS = 10 V
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
3Pages www.DataSheet.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
A
Fig. 13a - Unclamped Inductive Test Circuit
V DS
tp
IAS
Fig. 13b - Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig. 14a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
D.U.T.
+
-VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 14b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ 16N50C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
16N50 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
16N50C | SIHF16N50C | Vishay Siliconix |
16N50C3 | SPP16N50C3 | Infineon Technologies |