DataSheet.jp

16N50C の電気的特性と機能

16N50CのメーカーはVishay Siliconixです、この部品の機能は「SIHF16N50C」です。


製品の詳細 ( Datasheet PDF )

部品番号 16N50C
部品説明 SIHF16N50C
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




このページの下部にプレビューと16N50Cダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

16N50C Datasheet, 16N50C PDF,ピン配置, 機能
www.DataSheet.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560 V
VGS = 10 V
68
17.6
21.8
Single
TO-220AB
TO-220 FULLPAK
0.38
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
S
D
G
D2PAK (TO-263)
GDS
G
GD
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP16N50C-E3
D2PAK (TO-263)
SiHB16N50C-E3
TO-220 FULLPAK
SiHF16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
LIMIT
PARAMETER
TO220-AB
SYMBOL D2PAK (TO-263)
TO-220
FULLPAK
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ± 30
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
16
10
40
Linear Derating Factor
2
Single Pulse Avalanche Energyb
EAS 320
Maximum Power Dissipation
PD 250
38
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
- 55 to + 150
300
Notes
a. Limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
UNIT
V
A
W/°C
mJ
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





16N50C pdf, ピン配列
www.DataSheet.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
VGS
45 TOP 15 V
14 V
40
13 V
12 V
11 V
35 10 V
9.0 V
30 8.0 V
7.0 V
25
6.0 V
BOTTOM 5.0 V
20
15
TJ = 25 °C
10
5
0
0
7.0 V
5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-220)
45
40
35
30
25
20
15
TJ = 150 °C
10
5 TJ = 25 °C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
30
VGS
TOP
15 V
25
14 V
13 V
12 V
11 V
20
10 V
9.0 V
8.0 V
7.0 V
15
6.0 V
BOTTOM 5.0 V
10
5
TJ = 150 °C
7.0 V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-220)
3
ID = 16 A
2.5
2
1.5
1
0.5
VGS = 10 V
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


16N50C 電子部品, 半導体
www.DataSheet.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
A
Fig. 13a - Unclamped Inductive Test Circuit
V DS
tp
IAS
Fig. 13b - Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig. 14a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
D.U.T.
+
-VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 14b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ 16N50C データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
16N50

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
16N50C

SIHF16N50C

Vishay Siliconix
Vishay Siliconix
16N50C3

SPP16N50C3

Infineon Technologies
Infineon Technologies


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap