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FGH60N60UFD の電気的特性と機能

FGH60N60UFDのメーカーはFairchild Semiconductorです、この部品の機能は「Field Stop IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGH60N60UFD
部品説明 Field Stop IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGH60N60UFD Datasheet, FGH60N60UFD PDF,ピン配置, 機能
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FGH60N60UFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
August 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
± 20
120
60
180
298
119
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.33
1.1
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH60N60UFD Rev. A
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

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FGH60N60UFD pdf, ピン配列
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Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 30A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IES = 30A, dIES/dt = 200A/µs
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
2.0
1.8
47
179
83
567
Max
2.6
-
-
-
-
-
Units
V
ns
nC
FGH60N60UFD Rev. A
3
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/


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FGH60N60UFD 電子部品, 半導体
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Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
300
100
tr
Figure 14. Turn-off Characteristics vs.
Gate Resistance
6000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
td(off)
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
100
tf
10
0 10 20 30 40 50
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs
Collector Current
500
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
tr
100
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
100
td(off)
td(on)
10
0 20 40 60 80 100 120
Collector Current, IC [A]
tf
30
0 20 40 60 80 100 120
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
20
Common Emitter
VCC = 400V, VGE = 15V
10 IC = 60A
TC = 25oC
TC = 125oC
Eon
Figure 18. Switching Loss vs. Collector Current
20
Common Emitter
10 VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
Eon
Eoff
1
1 Eoff
0 10 20 30 40 50
Gate Resistance, RG []
0.1
0
20 40 60 80 100
Collector Current, IC [A]
120
FGH60N60UFD Rev. A
6
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

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部品番号部品説明メーカ
FGH60N60UFD

Field Stop IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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