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PDF FGH60N60SMD Data sheet ( Hoja de datos )
| Número de pieza | FGH60N60SMD | |
| Descripción | Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2013
FGH60N60SMD
600 V, 60 A Field Stop IGBT
Features
• Maximum Junction Temperature: TJ = 175oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• High Input Impedance
• Fast Switching: EOFF = 7.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
20
30
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
60A
4
IC = 30A
120A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
7000
6000
5000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
4000
3000
Cies
2000
1000
0
0.1
Coes
Cres
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 11. SOA Characteristics
300
100 10s
100s
1ms
10 ms
10 DC
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
8
60A
4
120A
IC = 30A
0
48
12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 200V
300V
400V
6
3
0
0 40 80 120 160 200
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
80
tr
60
40
20
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGH60N60SMD.PDF ] | |
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