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2SC3074 の電気的特性と機能

2SC3074のメーカーはToshiba Semiconductorです、この部品の機能は「TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC3074
部品説明 TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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2SC3074 Datasheet, 2SC3074 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
High speed switching time: tstg = 1.0 μs (typ.)
Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-08-27

1 Page





2SC3074 pdf, ピン配列
IC – VCE
10
Common emitter
8
100 90
80
Tc = 25°C
70
60
6 50
40
4 30
20
2 IB = 10 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE – IC
1.0
0.8
IB = 10 mA
0.6
20
Common emitter
Tc = 100°C
40 60 80 100
120
150
0.4
200
500
0.2
0
01 23456 7
Collector current IC (A)
2SC3074
1.2
1.0
0.8 IB = 10 mA
20
0.6
0.4
0.2
VCE – IC
Common emitter
Tc = 25°C
40 60 80
100
150
200
300
500
0
01234567
Collector current IC (A)
1.2
1.0
0.8 IB = 20 mA
40
0.6
0.4
0.2
VCE – IC
Common emitter
Tc = 55°C
120 160 200
250
300
500
0
01 23456 7
Collector current IC (A)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 1 V
Tc = 100°C
25
55
10
0.03
0.1 0.3 1 3
Collector current IC (A)
10
1
Common emitter
0.5 IC/IB = 20
0.3
VCE (sat) – IC
Tc = 55°C
0.1
25
0.05
0.03
100
0.01
0.03
0.1 0.3 1 3
Collector current IC (A)
10
3 2010-08-27


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共有リンク

Link :


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