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PDF IXFT7N90Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT7N90Q | |
| Descripción | HiPerFETTM Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
IXFH 7N90Q
IXFT 7N90Q
VDSS
ID25
RDS(on)
= 900 V
= 7A
= 1.5 W
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
I
DM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
M
d
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
900 V
900 V
±20 V
±30 V
7A
28 A
7A
20 mJ
700 mJ
5 V/ns
180
-55 ... +150
150
-55 ... +150
300
1.13/10
6
4
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
900
VDS = VGS, ID = 2.5 mA
3.0
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
5.0
±100
50
1
1.5
V
V
nA
mA
mA
W
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL94V-0
flammabilityclassification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98645 (8/99)
1-2
Datasheet pdf - http://www.DataSheet4U.net/
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