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PDF IXFH76N06-11 Data sheet ( Hoja de datos )
| Número de pieza | IXFH76N06-11 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
V
DSS
60 V
60 V
70 V
70 V
I
D25
76 A
76 A
76 A
76 A
R
DS(on)
11 mW
12 mW
11 mW
12 mW
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
ID119
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
T
stg
TL
Md
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 10 kW
Continuous
Transient
T
C
= 25°C (Chip capability = 125 A)
TC = 119°C, limited by external leads
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
N06 60 V
N07 70 V
N06 60 V
N07 70 V
±20 V
±30 V
76 A
76 A
304 A
100 A
30 mJ
2J
5 V/ns
360 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
1.15/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
0
V,
I
D
=
250
mA
N06
N07
V = V , I = 4 mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 40 A
76N06/N07-11
76N06/N07-12
Pulse test, t £ 300 ms, duty cycle d £ 2 %
60
70
2.0
V
V
3.4 V
±100 nA
100 mA
500 mA
11 mW
12 mW
TO-247 AD
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
q International standard package
JEDEC TO-247 AD
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
- easy to drive and to protect
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount with 1 screw
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92785H (12/98)
1-4
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH76N06-11.PDF ] | |
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