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PDF IXFT74N20 Data sheet ( Hoja de datos )
| Número de pieza | IXFT74N20 | |
| Descripción | HIPERFET POWER MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFT 68N20
IXFH/IXFT 74N20
VDSS ID25 RDS(on)
200 V 68 A 35 mW
200 V 74 A 30 mW
trr £ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
I DSS
RDS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
200 V
200 V
±20 V
±30 V
68N20
74N20
68N20
74N20
68N20
74N20
68
74
272
296
68
74
A
A
A
A
A
A
45 mJ
5 V/ns
360 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS= 10 V, ID = 0.5 ID25
74N20
68N20
Pulse test, t £ 300 ms, duty cycle d £ 2 %
200
2
V
4V
±100 nA
200 mA
1 mA
30 m W
35 m W
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
International standard packages
Low RDS
Rugged
(on) HDMOSTM process
polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface package
High power density
© 2000 IXYS All rights reserved
97522C (8/00)
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
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