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PDF IXFH70N15 Data sheet ( Hoja de datos )
| Número de pieza | IXFH70N15 | |
| Descripción | HiPerFETTM Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFH 70N15
IXFT 70N15
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
VDSS
ID25
RDS(on)
= 150 V
= 70 A
= 28 mW
trr £ 250ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
150 V
150 V
±20 V
±30 V
70 A
280 A
70 A
30 mJ
1.0 J
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 mA
V
GS(th)
V
DS
=
V,
GS
I
D
=
4
mA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
150 V
2.0 4.0 V
±100 nA
25 mA
750 mA
28 mW
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98583A (6/99)
1-2
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
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