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IXYH50N120C3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXYH50N120C3
部品説明 1200V XPT IGBT GenX3
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXYH50N120C3 Datasheet, IXYH50N120C3 PDF,ピン配置, 機能
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1200V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Advance Technical Information
IXYH50N120C3
VCES =
IC110 =
V CE(sat)
tfi(typ) =
1200V
50A
3.0V
57ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
105 A
50 A
230 A
40 A
750 mJ
ICM = 100
@VCE VCES
625
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
50A,
VGE
=
15V,
Note
1
TJ
=
125°C
Characteristic Values
Min. Typ. Max.
1200
V
2.5 4.5 V
25 μA
250 μA
±100 nA
2.5 3.0 V
3.2 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2011 IXYS CORPORATION, All Rights Reserved
DS100343(05/11)
Datasheet pdf - http://www.DataSheet4U.net/

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