DataSheet.es    


PDF SI2305ADS Data sheet ( Hoja de datos )

Número de pieza SI2305ADS
Descripción P-Channel 8-V (D-S) MOSFET
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



Hay una vista previa y un enlace de descarga de SI2305ADS (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! SI2305ADS Hoja de datos, Descripción, Manual

www.DataSheet.co.kr
New Product
Si2305ADS
Vishay Siliconix
P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = - 4.5 V
- 8 0.060 at VGS = - 2.5 V
0.088 at VGS = - 1.8 V
ID (A)
- 4.1
- 3.4
- 2.0
Qg (Typ.)
7.8 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
Halogen-free Option Available
TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Load Switch
• DC/DC Converter
S
G
Top View
Si2305ADS (A5)*
* Marking Code
Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free)
Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
Limit
-8
±8
- 5.4
- 4.3
- 4.1a, b
- 3.3a, b
- 10
- 1.4
- 0.8a, b
1.7
1.1
0.96a, b
0.62a, b
- 50 to 150
260
RoHS
COMPLIANT
Unit
V
A
W
°C
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 page




SI2305ADS pdf
www.DataSheet.co.kr
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6.0
Si2305ADS
Vishay Siliconix
4.5
3.0
1.5
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2.0 1.00
1.5 0.75
1.0 0.50
0.5 0.25
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
0.00
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet SI2305ADS.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SI2305ADSP-Channel 8-V (D-S) MOSFETVishay Siliconix
Vishay Siliconix

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar