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PDF MJ3771 Data sheet ( Hoja de datos )
| Número de pieza | MJ3771 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ3771
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
Vce(sat)=1V(Max)@Ic=15A
·Low Leakage -
Icbo=1mA(max)@50V
·High Current-Gain-Bandwidth Product-
fT=2MHz(min)@Ic=1A
APPLICATIONS
·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design
requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
50 V
VCEO Collector-Base Voltage
50 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
30 A
IBB Base Current-Continuous
7.5 A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJ3771.PDF ] | |
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