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PDF IXGH72N60C3 Data sheet ( Hoja de datos )
| Número de pieza | IXGH72N60C3 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
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GenX3TM 600V IGBT IXGH72N60C3
High-Speed PT IGBT for
40-100kHz Switching
VCES =
IC110 =
V ≤CE(sat)
tfi (typ) =
600V
72A
2.5V
55ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C (Chip Capability)
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
72 A
360 A
50 A
500 mJ
ICM = 150
≤VCE VCES
540
A
W
-55 ... +150
150
-55 ... +150
300
260
1.13/10
°C
°C
°C
°C
°C
Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
ICES
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ±20V
IC = 50A, VGE = 15V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0 5.5 V
50 μA
1 mA
±100 nA
2.10 2.50 V
1.65 V
TO-247 AD
G
CE
Tab
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Avalanche Rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS99961B(11/09)
Datasheet pdf - http://www.DataSheet4U.net/
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5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 480V
I C = 100A
I C = 50A
3 4 5 6 7 8 9 10 11 12 13
RG - Ohms
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
14 15
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
3.5 5.6
3.0 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
2.5 VCE = 480V
4.8
4.0
2.0
I C = 100A
3.2
1.5 2.4
1.0 1.6
0.5
I C = 50A
0.8
0.0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
180
160
140
120
100
80
60
40
20
20
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
t f td(off) - - - -
RG = 2Ω , VGE = 15V
VCE = 480V
TJ = 125ºC
TJ = 25ºC
30 40 50 60 70 80 90
IC - Amperes
150
140
130
120
110
100
90
80
70
100
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH72N60C3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
2.8
2.4 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
2.0 VCE = 480V
5.6
4.8
4.0
1.6 3.2
1.2
TJ = 125ºC, 25ºC
0.8
2.4
1.6
0.4 0.8
0.0 0.0
20 30 40 50 60 70 80 90 100
IC - Amperes
190
180
170
160
150
140
130
120
110
100
90
2
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
500
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 480V
450
400
350
I C = 100A
300
250
I C = 50A
200
150
100
50
0
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160
t f td(off) - - - -
140 RG = 2Ω , VGE = 15V
VCE = 480V
120
125
115
105
100
I C = 100A
80
I C = 50A
95
85
60 75
40 65
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH72N60C3.PDF ] | |
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