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PDF IXGT72N60B3 Data sheet ( Hoja de datos )
| Número de pieza | IXGT72N60B3 | |
| Descripción | GenX3 B3-Class IGBTs | |
| Fabricantes | IXYS Corporation | |
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GenX3TM B3-Class
IGBTs
Medium Speed low Vsat PT
IGBTs 5-40 kHz Switching
IXGH72N60B3
IXGT72N60B3
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 72A
≤£ 1.80V
= 90ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
Mounting Torque (TO-247)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
TO-247
TO-268
Maximum Ratings
600
600
V
V
±20 V
±30 V
75 A
72 A
400 A
20 A
200 mJ
ICM = 240
@ VCE ≤ 600
540
A
V
W
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
5
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
75 μA
750 μA
±100 nA
1.51 1.80 V
1.48 V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
(TAB)
GE
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z Avalanche Rated
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS99847A(02/09)
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
89
78
6
I C =100A
7
5
4 Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
3 VCE = 480V
I C = 50A
6
5
4
2
I C = 25A
3
12
01
0 5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
7
7
66
5
I C = 100A
5
4
Eoff Eon - - - -
3 RG = 3Ω , VGE = 15V
VCE = 480V
I C = 50A
2
4
3
2
11
I C = 25A
00
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
230 250
210
190 t f
td(off) - - - -
170
RG = 3Ω , VGE = 15V
VCE = 480V
150
TJ = 125ºC
235
220
205
190
130 175
110 160
90
TJ = 25ºC
145
70 130
20 30 40 50 60 70 80 90 100
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH72N60B3
IXGT72N60B3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
7
6 Eoff Eon - - - -
RG = 3Ω , VGE = 15V
5 VCE = 480V
TJ = 125ºC
7
6
5
44
33
2
TJ = 25ºC
2
11
00
20 30 40 50 60 70 80 90 100
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
240 1300
220
I C = 25A, 50A, 100A
1150
200
I C = 100A
180
1000
850
160 I C = 50A
140
700
550
120
100
80
0
I C = 25A
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
400
250
VCE = 480V
100
5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
220 260
200 245
180 230
I C = 25A, 50A, 100A
160 215
140 200
120 185
100
tr
td(off) - - - -
170
80
RG = 3Ω , VGE = 15V
155
VCE = 480V
60 140
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Datasheet pdf - http://www.DataSheet4U.net/
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| PDF Descargar | [ Datasheet IXGT72N60B3.PDF ] | |
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