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IXGT72N60B3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGT72N60B3
部品説明 GenX3 B3-Class IGBTs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXGT72N60B3 Datasheet, IXGT72N60B3 PDF,ピン配置, 機能
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GenX3TM B3-Class
IGBTs
Medium Speed low Vsat PT
IGBTs 5-40 kHz Switching
IXGH72N60B3
IXGT72N60B3
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 72A
£ 1.80V
= 90ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
Mounting Torque (TO-247)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
TO-247
TO-268
Maximum Ratings
600
600
V
V
±20 V
±30 V
75 A
72 A
400 A
20 A
200 mJ
ICM = 240
@ VCE 600
540
A
V
W
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
5
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
75 μA
750 μA
±100 nA
1.51 1.80 V
1.48 V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
(TAB)
GE
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z Avalanche Rated
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS99847A(02/09)
Datasheet pdf - http://www.DataSheet4U.net/

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GenX3 B3-Class IGBTs

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