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IXGT72N60A3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGT72N60A3
部品説明 GenX3 600V IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXGT72N60A3 Datasheet, IXGT72N60A3 PDF,ピン配置, 機能
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GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for
up to 5kHz switching
IXGH72N60A3
IXGT72N60A3
VCES =
IC110 =
VCE(sat)
tfi(typ)
=
600V
72A
1.35V
250ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped inductive load @ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
75 A
72 A
400 A
ICM = 150
A
540
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
4
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VVGCEE
=
=
V0VCES
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
75 μA
750 μA
±100 nA
1.35 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for low conduction losses
z Square RBSOA
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
© 2008 IXYS CORPORATION, All rights reserved
DS99759B(07/08)
Datasheet pdf - http://www.DataSheet4U.net/

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