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PDF IXGH72N60A3 Data sheet ( Hoja de datos )
| Número de pieza | IXGH72N60A3 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
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GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for
up to 5kHz switching
IXGH72N60A3
IXGT72N60A3
VCES =
IC110 =
VCE(sat)
tfi(typ)
≤
=
600V
72A
1.35V
250ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped inductive load @ ≤ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
75 A
72 A
400 A
ICM = 150
A
540
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
4
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VVGCEE
=
=
V0VCES
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
75 μA
750 μA
±100 nA
1.35 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for low conduction losses
z Square RBSOA
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
© 2008 IXYS CORPORATION, All rights reserved
DS99759B(07/08)
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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18
16
14
12
10
8
6
4
2
0
0
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
9
I C = 100A
8
7
I C = 50A
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 480V
6
5
4
3
2
I C = 25A
1
0
5 10 15 20 25 30 35
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
18
16 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
14 VCE = 480V
12
I C = 100A
7
6
5
5
10 4
8
I C = 50A
3
62
42
2
I C = 25A
1
00
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
400 610
380
360 TJ = 125ºC
570
530
340
320
t f td(off) - - - -
RG = 3Ω , VGE = 15V
300 VCE = 480V
490
450
410
280 370
260 330
240 TJ = 25ºC
290
220 250
20 30 40 50 60 70 80 90 100
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGH72N60A3
IXGT72N60A3
18
16
14
12
10
8
6
4
2
0
20
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Eoff Eon - - - -
RG = 3Ω , VGE = 15V
VCE = 480V
TJ = 125ºC
6.75
6.00
5.25
4.50
3.75
TJ = 25ºC
3.00
2.25
1.50
0.75
0.00
30 40 50 60 70 80 90 100
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
390 1400
387
tf
td(off) - - - -
1300
TJ = 125ºC, VGE = 15V
384
VCE = 480V
1200
381 1100
378 I C = 100A
375
372 I C = 50A
1000
900
800
369 700
366
I C = 25A
363
600
500
360
0
400
5 10 15 20 25 30 35
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
400 580
380 540
360
I C = 25A, 50A, 100A
340
500
460
320 420
300 380
280 340
260
tf
td(off) - - - -
300
RG = 3Ω , VGE = 15V
240
VCE = 480V
260
220 220
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
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