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GB50NA120UXのメーカーはVishay Siliconixです、この部品の機能は「Ultrafast IGBT」です。 |
部品番号 | GB50NA120UX |
| |
部品説明 | Ultrafast IGBT | ||
メーカ | Vishay Siliconix | ||
ロゴ | |||
このページの下部にプレビューとGB50NA120UXダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet.co.kr
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 50 A, 25 °C
1200 V
50 A at 92 °C
3.22 V
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
VCES
IC
ICM
ILM
IF
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
84
57
150
150
76
52
± 20
431
242
278
156
2500
UNITS
V
A
V
W
V
Document Number: 93101 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
GB50NA120UX
"High Side Chopper" IGBT SOT-227 Vishay Semiconductors
(Ultrafast IGBT), 50 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ, TStg
Thermal resistance, junction to case
IGBT
Diode
RthJC
Thermal resistance, case to sink per module
RthCS
Mounting torque, 6-32 or M3 screw
Weight
MIN.
- 40
-
-
-
-
-
TYP.
-
-
-
0.05
-
30
MAX.
150
0.29
0.45
-
1.3
-
UNITS
°C
°C/W
Nm
g
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90
IC - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
1
0.1
0.01
1
10
100
1000
10 000
VCE (V)
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
200
175
150
125 TJ = 25 °C
100
75 TJ = 125 °C
50
25
0
012345678
VCE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
10
1 TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
100 300 500 700 900 1100
VCES (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Document Number: 93101 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
3Pages www.DataSheet.co.kr
GB50NA120UX
Vishay Semiconductors "High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
1
0.1
0.01
0.001
0.00001
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
DC D = 0.02
D = 0.01
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
0.1
0.01
0.001
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
DC D = 0.01
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
10
10
www.vishay.com
6
For technical questions within your region, please contact one of the following: Document Number: 93101
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ GB50NA120UX データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GB50NA120UX | Ultrafast IGBT | Vishay Siliconix |