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GB150TS60NPBF の電気的特性と機能

GB150TS60NPBFのメーカーはVishay Siliconixです、この部品の機能は「Ultrafast Speed IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 GB150TS60NPBF
部品説明 Ultrafast Speed IGBT
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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GB150TS60NPBF Datasheet, GB150TS60NPBF PDF,ピン配置, 機能
www.DataSheet.co.kr
GB150TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 150 A, 25 °C
600 V
138 A
2.64 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
138
93
300
300
178
121
± 20
500
280
2500
UNITS
V
A
V
W
V
Document Number: 94502
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





GB150TS60NPBF pdf, ピン配列
www.DataSheet.co.kr
GB150TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products
(Ultrafast Speed IGBT), 138 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
Junction to case per leg
IGBT
Diode
TJ, TStg
RthJC
Case to sink per module
RthCS
Mounting torque
case to heatsink
case to terminal 1, 2, 3
Weight
MIN.
- 40
-
-
-
-
-
-
TYP.
-
0.17
0.19
0.1
-
-
185
MAX.
150
0.25
0.32
-
4
3
-
UNITS
°C
°C/W
Nm
g
200
Vge = 18V
Vge = 15V
Vge = 12V
150
100
Vge = 9V
50
0
01234
VCE (V)
Fig. 1 - Typical IGBT Output Characteristics
TJ = 25 °C, tp = 500 μs
200
Vge = 18V
Vge = 15V
Vge = 12V
150
Vge = 9V
100
50
0
012345
VCE (V)
Fig. 2 - Typical IGBT Output Characteristics
TJ = 125 °C, tp = 500 μs
200
180
160
140
120
100
80
60
40 Tj = 125°C
20 Tj = 25°C
0
012345678
VGE (V)
Fig. 3 - Typical Transfer Characteristics
VCE = 20 V, tp = 500 μs
4.5
4
Ic = 200A
3.5
Ic = 150A
3
2.5 Ic = 75A
2
1.5
0
30 60 90 120
TJ, Junction Temperature (°C)
150
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
VGE = 15 V, 500 μs pulse width
Document Number: 94502
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


GB150TS60NPBF 電子部品, 半導体
www.DataSheet.co.kr
GB150TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
1
0.1
0.01
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
1
D = 0.5
0.1
0.01
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®)
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 94502
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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部品番号部品説明メーカ
GB150TS60NPBF

Ultrafast Speed IGBT

Vishay Siliconix
Vishay Siliconix


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