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GA200HS60S1 の電気的特性と機能

GA200HS60S1のメーカーはInternational Rectifierです、この部品の機能は「Standard Speed IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 GA200HS60S1
部品説明 Standard Speed IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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GA200HS60S1 Datasheet, GA200HS60S1 PDF,ピン配置, 機能
www.DataSheet.co.kr
Bulletin I27222 03/06
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT Technology
• Standard speed: optimized for hard switching
operating frequencies up to 1000 Hz
• Very Low Conduction Losses
• Industry standard package
GA200HS60S1
Standard Speed IGBT
VCES = 600V
VCE(on) typ. = 1.13V @
VGE = 15V, IC = 200A
TJ = 25°C
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage
for TIG welding machines
INT-A-PAK
Absolute Maximum Ratings
Parameters
VCES
IC
ICM
ILM
VGE
VISOL
PD
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 110°C
Peak Switching Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 85°C
Max
600
480
220
800
800
± 20
2500
830
430
www.irf.com
Units
V
A
V
W
1
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GA200HS60S1 pdf, ピン配列
www.DataSheet.co.kr
GA200HS60S1
Bulletin I27222 03/06
1000
Vge = 15V
500µs Pulse Width
Tj = 125°C
100
Tj = 25°C
10
0.6 0.8 1.0 1.2 1.4 1.6
VCE, Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100 Tj = 125°C
10
Tj = 25°C
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500
TC, Case Temperature (°C)
Fig. 3 - Maximum Collector Current vs.
Case Temperature
1.6
400A
1.4
1.2
200A
1 120A
0.8
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 - Typical Collector-to-Emitter Voltage vs.
Junction Temperature
www.irf.com
3
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GA200HS60S1 電子部品, 半導体
www.DataSheet.co.kr
GA200HS60S1
Bulletin I27222 03/06
Ordering Information Table
Device Code
GA 200 H S 60 S
1
1234 5 67
1 - Essential Part Number IGBT modules
2 - Current rating
(200 = 200A)
3 - Circuit Configuration (H = Half Bridge without f/w diode)
4 - Int-A-Pak
5 - Voltage Code
(60 = 600V)
6 - Speed/ Type
(S = Standard Speed IGBT)
7 - Assy location IRCI
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/06
6 www.irf.com
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共有リンク

Link :


部品番号部品説明メーカ
GA200HS60S

Standard Speed IGBT

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GA200HS60S1

Standard Speed IGBT

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GA200HS60S1PBF

IGBT ( Insulated Gate Bipolar Transistor )

Vishay Siliconix
Vishay Siliconix


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