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PDF GT100LA120UX Data sheet ( Hoja de datos )
| Número de pieza | GT100LA120UX | |
| Descripción | IGBT | |
| Fabricantes | Vishay Siliconix | |
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GT100LA120UX
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
1200 V
100 A at 71 °C
2.36 V
FEATURES
• Trench IGBT technology
• Very low VCE(on)
• Square RBSOA
• HEXFRED® clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
134
92
270
270
87
59
± 20
463
260
338
190
2500
UNITS
V
A
V
W
V
Document Number: 93099 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GT100LA120UX
"Low Side Chopper" IGBT SOT-227 Vishay Semiconductors
(Trench IGBT), 100 A
40
35
Eon
30
25
20
15
10 Eoff
0
0 10 20 30 40 50
1000
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
td(on)
td(off)
tf
250
230
210
190
170
150
130
110
90
70
100
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
40
35
30
25 TJ = 125 °C
20
tr 15 TJ = 25 °C
10
5
100
0
10 20 30 40 50
0
100
1000
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
IC = 100 A, VGE = 15 V
2650
dIF/dt (A/µs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
2400
2150
TJ = 125 °C
1900
1650
1400
1150
900 TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
Document Number: 93099 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet GT100LA120UX.PDF ] | |
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