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GT100DA60UのメーカーはVishay Siliconixです、この部品の機能は「Insulated Gate Bipolar Transistor」です。 |
部品番号 | GT100DA60U |
| |
部品説明 | Insulated Gate Bipolar Transistor | ||
メーカ | Vishay Siliconix | ||
ロゴ | |||
このページの下部にプレビューとGT100DA60Uダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet.co.kr
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
IF DC
600 V
100 A at 117 °C
1.72 V
100 A at 25 °C
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
VCES
IC (1)
ICM
ILM
IF
IFSM
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 117 °C
TC = 25 °C
TC = 117 °C
Any terminal to case, t = 1 min
600
184
137
350
350
100
71
200
± 20
577
223
205
79
2500
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
UNITS
V
A
V
W
V
Document Number: 93185 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
GT100DA60U
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
Junction to case
IGBT
Diode
TJ, TStg
RthJC
Case to sink per module
Mounting torque, 6-32 or M3 screw
RthCS
Weight
MIN.
- 40
-
-
-
-
-
TYP.
-
-
-
0.05
-
30
MAX.
175
0.26
0.73
-
1.3
-
UNITS
°C
°C/W
Nm
g
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180 200
93185_01 IC - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
1
0.1
0.01
1
93185_02
10 100
VCE (V)
Fig. 2 - IGBT Reverse Bias SOA
TJ = 175 °C, VGE = 15 V
1000
300
275
250
225
200
175
150
125
100
75
50
25
0
0
TJ = 125 °C
TJ = 25 °C
TJ = 175 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
93185_02
VCE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
VGE = 15 V
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120
93185_04
IF - Continuous Forward Current (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
Document Number: 93185 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
3Pages www.DataSheet.co.kr
GT100DA60U
Vishay Semiconductors
1
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
0.1
0.01
0.001
0.00001
93185_16
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
0.1
0.01
0.001
0.00001
93185_17
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
10
10
www.vishay.com
6
For technical questions within your region, please contact one of the following: Document Number: 93185
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
GT100DA60U | Insulated Gate Bipolar Transistor | Vishay Siliconix |