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EGP10D の電気的特性と機能

EGP10DのメーカーはVishay Siliconixです、この部品の機能は「(EGP10x) Glass Passivated Ultrafast Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 EGP10D
部品説明 (EGP10x) Glass Passivated Ultrafast Rectifier
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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EGP10D Datasheet, EGP10D PDF,ピン配置, 機能
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EGP10A thru EGP10G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
SUPERECTIFIER®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 400 V
IFSM
30 A
trr 50 ns
VF 0.95 V, 1.25 V
TJ max.
150 °C
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50
35
50
100 150 200 300 400
70 105 140 210 280
100 150 200 300 400
1.0
30
Operating junction and storage temperature range TJ, TSTG
- 65 to + 150
UNIT
V
V
V
A
A
°C
Document Number: 88582 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





EGP10D pdf, ピン配列
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EGP10A thru EGP10G
Vishay General Semiconductor
100
Pulse Width = 300 μs
1 % Duty Cycle
10 TJ = 150 °C
1 TJ = 25 °C
0.1
0.01
0.2
EGP10A thru EGP10D
EGP10F and EGP10G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
70
TJ = 25 °C
60 f = 1.0 MHz
Vsig = 50 mVp-p
50
40
30
20
10
0
0.1
EGP10A thru EGP10D
EGP10F and EGP10G
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
1000
100
100
TJ = 150 °C
10
10
TJ = 100 °C
1
1
0.1
TJ = 25 °C
0.01
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
0.1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
Note
DIA.
Lead
diameter
is
0.026
0.023
(0.66)
(0.58)
for
suffix
“E”
part
numbers
1.0 (25.4)
MIN.
Document Number: 88582 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


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